Principal Process Integration Engineer

Overview

In this role you will drive process integration for small signal MOSFET design and fabrication, bridging development across 200mm and 300mm platforms. You will lead complex process development tasks, collaborate with third-party fabs, and mentor engineers to deliver higher efficiency solutions. You’ll address yield challenges in fab environments and contribute to strategic tech qualification. This is a chance to impact product performance and scale in a globally active semiconductor group.

Pay / Benefits

• competitive base salary
• annual incentive plan
• pension scheme
• visa sponsorship and relocation assistance
• hybrid working policy
• 33 days annual leave including bank holidays

Responsibilities

• Develop technologies for 200mm and 300mm platforms
• Collaborate with third-party vendors/fabs
• Lead major process development or integration tasks on complex projects
• Support qualification of new process and product developments (Substrate & Epix)
• Plan and execute DOE studies and present conclusions
• Implement process development procedures and standards in projects
• Mentor less experienced engineers and module team members
• Support technical crisis management (yield issues, fab excursions)
• Work independently with minimal supervision

Key requirements

• Master’s Degree in Semiconductor Device Physics or Semiconductor Technology, and/or Microelectronics
• Minimum 5 years of experience in semiconductor fab in Process Integration
• Excellent knowledge of Trench MOS at low and high voltage platforms
• Thorough knowledge of all modules (Mask, Etch, PVD, CVD, Diffusion)
• Strong verbal and written communication skills
• Willingness to travel up to 10%
• Team player with a strong drive to achieve success

• team player
• strong communication skills
• mentoring and leadership
• Trench MOS technology (low/high voltage)
• Process modules: Mask, Etch, PVD, CVD, Diffusion
• DOE planning and execution

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